Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB697 2SB697K
DESCRIPTION
·With TO-3 package
·Complement to type 2SD733/733K
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SB697 -160
V
CBO
V
CEO
V
EBO
IC Collector current -12 A
Collector-base voltage
2SB697K
2SB697 -140
Collector-emitter voltage
2SB697K
Emitter-base voltage Open collector -6 V
Open emitter
Open base
V
-180
V
-160
ICM Collector current-peak -20 A
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -40~150
stg
=25℃
C
100 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB697 2SB697K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SB697 -140
V
(BR)CEO
V
(BR)CBO
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
=-50mA ;IB=0
I
C
2SB697K
2SB697 -160
IC=-5mA ;IE=0
2SB697K
-160
-180
V
V
V
h
Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.0 -2.5 V
CEsat
V
Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V
BE
I
Collector cut-off current VCB=-80V; IE=0 -0.1 mA
CBO
I
Emitter cut-off current VEB=-4V; IC=0 -0.1 mA
EBO
h
DC current gain IC=-1A ; VCE=-5V 40 320
FE-1
h
DC current gain IC=-5A ; VCE=-5V 20
FE-2
fT Transition frequency IC=-1A ; VCE=-5V 15 MHz
Classifications
FE-1
C D E F
40-80 60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB697 2SB697K
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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