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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB681
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
APPLICATIONS
·For AF power amplifier use.
·Recommended for use in output stage of 80 watts power
amplifier .
ABSOLUTE MAXIMUM RATINGS(T
= -150V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
P
T
T
stg
Collector-Base Voltage -150 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -12 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150
Storage Temperature -55~150
100 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB681
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
I
CEO
I
EBO
h
FE-1
h
FE-2
(sat)
f
T
Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 B -150 V
Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 -6 V
Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -2.5 V
Collector Cutoff Current VCE= -120V; IB= 0 -0.1 mA
Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA
DC Current Gain IC= -1A ; VCE= -5V 40 140
DC Current Gain IC= -5A ; VCE= -5V 20
Current-Gain—Bandwidth Product IC= -1A ; VCE= -5V 13 MHz
isc Website：www.iscsemi.cn
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