Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB680
DESCRIPTION
·High Power Dissipation: PC= 100W(Max.)@T
·Collector-Emitter Breakdown Voltage: V
(BR)CEO
·Complement to Type 2SC1080
APPLICATIONS
·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃
C
= -100V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
E
P
T
T
stg
Collector-Base Voltage -100 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -12 A
Emitter Current-Continuous 12 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150
Storage Temperature -65~150
100 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB680
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
(on)
OB
Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0 -100 V
Emitter-Base Breakdown Voltage IE= -10mA ;IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V
Base-Emitter On Voltage IC= -10A ; VCE= -5V -2.5 V
Collector Cutoff Current VCB= -50V; IE= 0 -0.1 mA
Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA
DC Current Gain IC= -2A ; VCE= -5V 40 140
DC Current Gain IC= -7A ; VCE= -5V 15
Output Capacitance
V
CB
= -10V; f
= 1MHz
test
900 pF
f
T
Current-Gain—Bandwidth Product IC= -2A ; VCE= -5V 6 MHz
h
Classifications
FE-1
R Y
40-80 70-140
isc Website：www.iscsemi.cn
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