Page 1
SILICON
EPITAXIAL
PNP
(DARLINGTON
TYPE (PCT
POWER)
PROCESS)
2SB678
LOW
FREQUENCY
MEDIUM
SPEED
PULSE MOTOR
DRIVE
APPLICATIONS.
FEATURES
•
High DC Current Gain
Saturation Voltage : V
Low
DRIVE,
:
MEDIUM
SWITCHING
RELAY
POWER
APPLICATIONS.
Complementary to 2SD688.
=
MAXIMUM
RATINGS
(Ta
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
Emitter Current
Collector
Dissipation
Junction
Storage
Temperature
Temperature Range
Power
(Ta
(Tc
EQUIVALENT CIRCUIT
AMPLIFIER AND
DRIVE AND
h
)=1000(Min.)
FE
2
(
(V
=-2V, I
CE
(sat)=-1.5V(Max.
CE
25°C)
=
25°C)
=
25°C)
HAMMER
=-1A)
C
SYMBOL
VcBO
'CEO
v
EBO
IE
Tsts
(I
)
RATING
-100
-100
-10
-1.5
1.5
0.8
175
-65M.75
=-1A)
C
INDUSTRIAL APPLICATIONS
jZfo.45
UNIT
V
1.
2.
3.
JEDEC TO-39
TOSHIBA 2-8B1A
Weight :
Unit in
gfe.3 9
MAX.
j2fe.45 MAX.
05.08
EMITTER
BASE
COLLECTOR (CASE)
TB-5B
TC-5,
1.13g
mm
BASE
I""
1—
o
c
ELECTRICAL
CHARACTERISTICS
CHARACTERISTIC
Collector
Cut-off
Current
Emitter Cut-off Current
Breakdown
Voltage
DC Current
Saturation
Voltage
Collector-Emitter
Base-Emitter
Gain
Collector-Emitter
Base-Emitter
Turn-on Time ton
Switching
Time
Storage
Fall
iiiifiiiiiiiiiiiiiini(iriiiiuiHiiiruiiiiiimiiiiiiiHiiiHiiiiiiiiniiiiiHiiiHiiiiiiiiiiiiiiHiiiiiiiiiiiiiii«iiiiiiiiiiiiiiiiiiitiiiim CORPORATION
Time
Time
=
(Ta
25°c)
SYMBOL TEST CONDITION MIN.
I
CBO
x
EB0
v
(BR)
v
(BR)EBO
h
FE(l)
tiFE(2)
v
CE(sat)
V
BE(sat)
t
stg
tf
v
=-ioov,
CB
v
=-iov,
EB
I
=-10mA,
c
CEO
lE=-5mA, IC=0
VCE=-2V,
VCE=-2V,
Ic=-1A,
IC=-1A,
20^
-lBl=lB2
DUTY CYCLES
\JIps
=0
I
E
ic=o
Ib=0
I
=-0.1A 2000
C
I
=-1A
C
lB=-2mA
lB=-2mA
I
Bg
(
'
=2mA
1%
U
V
CC
OUTHJT
-i
30V
TYP. MAX. UNIT
-
-
-
-
-10
-
-
-
-
-
- -
- -
- -
- -
-
-
0.3
2.0
0.7
-100
1000
-10
-10
-1.5
-2.5
-
-
-
yA
HA
V
V
ys
-275-
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