Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB673
DESCRIPTION
·High DC Current Gain= 2000(Min)@ I
: h
FE
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= -100V(Min)
·Low Collector Saturation Voltage-
: V
= -1.5V(Max)@ I
CE(sat)
·Complement to Type 2SD633
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
= -3A
C
= -3A
C
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
I
P
T
T
EBO
C
I
B
C
stg
Collector-Base Voltage -100 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -7 A
B Base Current-DC -0.2 A
Collector Power Dissipation
=25℃
T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
40 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB673
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
V
CE(
V
h
h
BE(
I
I
sat
sat
CBO
EBO
FE-1
FE-2
Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0 -100 V
Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA -1.5 V
)-1
Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA -2.0 V
)-2
Base-Emitter Saturation Voltage IC= -3A ,IB= -6mA -2.5 V
)
sat
Collector Cutoff Current VCB= -100V, IE= 0 -100 μA
Emitter Cutoff Current VEB= -5V; IC= 0 -4 mA
DC Current Gain IC= -3A ; VCE= -3V 2000 15000
DC Current Gain IC= -7A ; VCE= -3V 1000
Switching times
t
on
Turn-on Time 0.8 μs
t
stg
t
f
Storage Time 2.0 μs
Fall Time
isc Website：www.iscsemi.cn
= 15Ω, VCC= -45V
R
L
= -IB2= -6mA
I
B1
2.5 μs
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