Page 1
2SB649/2SB649A
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
RoHS Compliant Product
FEATURES
Power smplifier applications
Power dissipation
P
: 1 W （Tamb=25℃）
CM
Collector current
I
CM
: - 1.5 A
A suffix of "-C" specifies halogen & lead-free
11.0±0.2
15.3±0.2
8.0±0.2
1 2 3
TO-126C
2.0±
4.14±0.1
1.4±0.1
1.27±0.1
0.76±0.1
Collector-base voltage
V
Collector-emitter voltage
V
2SB649
2SB649A
Operating and storage junction temperature range
T
: -180 V
(BR)CBO
CEO
: -55℃ to +150
J，Tstg
: -120 V
: -160 V
4.55
Dimensions in Millimeters
2.28 Typ.
±0.1
1: Emitter
2: Collector
3: Base
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
0.2
O2.8±0.1
0.5±
0.1
3.2±
0.2
O3.2±0.1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
The 2SB649 and 2SB649A are grouped by h as follows.
*
Rank
B
Symbol Test conditions MIN MAX UNI
V
V
V
h
V
Ic=- 1 A ， IE=0
(BR)CBO
(BR)CEO
(BR)EBO
I
CBO
VCB=-160
VEB= - 4V , IC=0
I
EBO
*
FE(1)
h
*
FE(2)
* IC=- 500 mA, IB=-50mA
CE (sat)
* VCE=- 5V,IC=- 150mA
V
BE
f
T
C
ob
FE1
C
m
Ic=- 10mA ， I
m
IE=- 1 A， Ic=0
V ,
V
= 5V, IC= -150 mA
CE
V
=-5V, IC= - 500mA
CE
=-5V,, IC=- 150 mA
V
CE
V
CB
=-10V , IE=0,f=1MHz
D
2SB649
=0
B
2SB649A
IE=0 -10
2SB649
- 2SB649A
-1 V
-180
-120
V
-160
-5
-10
60
60
30
320
200
-1.5
V
140
27
T
V
V
μA
μA
MH
z
pF
2SB649 60 - 120 100 - 200 160 - 320
2SB649A 60 - 120 100 - 200
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
-Jun-2002 Rev. A
01
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Page 2
Elektronische Bauelemente
30
(W)
C
20
Maximum Collector Dissipation
10
Collector power dissipation P
0 50 100 150
Case temperature T
Curve
(°C)
C
2SB649/2SB649A
Plastic Encapsulate Transistors
–3
I
Cmax
–1.0
(A)
C
–0.3
–0.1
Collector current I
–0.03
–0.01
DC Operation (TC = 25°C)
–1 –3 –10
Collector to emitter voltage V
PNP Type
Area of Safe Operation
(–13.3 V, –1.5 A)
(–40 V, –0.5 A)
2SB649
–30 –100 –300
(–120 V, –0.038 A)
(–160 V, –0.02 A)
2SB649A
(V)
CE
Typical Output Characteristics
–1.0
–0.8
(A)
C
–0.6
–0.4
Collector current I
–0.2
0 –10 –40–20
Collector to emitter voltage VCE (V)
–5.5
–5.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5 mA
TC = 25°C
P
C
= 20 W
IB = 0
–30 –50
DC Current Transfer Ratio
vs. Collector Current
350
VCE = –5V
350
FE
250
200
150
100
DC current transfer ratio h
50
0
–1 –10 –100 –1,000
Collector current I
Ta = 75
25
–25°C
°C
°C
(mA)
C
Typical Transfer Characteristics
–500
VCE = –5 V
–100
(mA)
C
–10
Collector current I
–1
0 –0.4
Base to emitter voltage V
Collector to Emitter Saturation
–1.2
–1.0
–0.8
(V)
–0.6
CE(sat)
V
–0.4
–0.2
Collector to emitter saturation voltage
–0
Voltage vs. Collector Current
IC = 10 I
B
–1 –10
Collector current IC (mA)
°C
25
Ta = 75
–100
–25
–0.8–0.2 –0.6 –1.0
(V)
BE
Ta = 75°C
–25
25
–1,000
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2of 2
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