Datasheet 2SB647A, 2SB647 Datasheet (HIT)

2SB647, 2SB647A

Silicon PNP Epitaxial

Application

• Low frequency power amplifier

• Complementary pair with 2SD667/A

Outline

TO-92MOD

1. Emitter

2. Collector

3. Base

3

2

1

2SB647, 2SB647A

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SB647 2SB647A Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

2SB647 2SB647A

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base breakdown
voltage

Collector cutoff current I
DC current transfer ratio h

Collector to emitter
saturation voltage

Base to emitter voltage V

Gain bandwidth product f
Collector output capacitance Cob — 20 — — 20 — pF VCB = –10 V, IE = 0

Notes: 1. The 2SB647 and 2SB647A are grouped by h

2. Pulse test

BCD

2SB647 60 to 120 100 to 200 160 to 320
2SB647A 60 to 120 100 to 200 —

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

FE1

h

FE2

V

CE(sat)

BE

T

–120 — — –120 — — V IC = –10 µA, IE = 0

–80 — — –100 — — V IC = –1 mA, RBE = ∞

–5 — — –5 — — V IE = –10 µA, IC = 0

— — –10 — — –10 µAVCB = –100 V, IE = 0

*160 — 320 60 — 200 VCE = –5 V,

30 — — 30 — — VCE = –5 V,

— — –1 — — –1 V IC = –500 mA,

— — –1.5 — — –1.5 V VCE = –5 V,

— 140 — — 140 — MHz VCE = –5 V, IC = –150 mA

–120 –120 V
–80 –100 V
–5 –5 V
–1 –1 A
–2 –2 A

0.9 0.9 W

I

= –150 mA*

C

I

= –500 mA*

C

I

= –50 mA*

B

I

= –150 mA*

C

f = 1 MHz

as follows.

FE1

2

2

2

2

2

2SB647, 2SB647A

Maximum Collector Dissipation

Curve

1.2

(W)

C

0.8

0.4

Collector power dissipation P

0 50 150100

Ambient Tmperature Ta (°C)

Typical Transfer Characteristics

–500

VCE = –5 V

–200

Pulse

–100

–50

(mA)

C

–20
–10

25

Ta = 75°C

–5

–2

Collector current I

–1

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base to Emitter Voltage VBE (V)

–25

Typical Output Characteristics

–1.0

–120

–100

–0.8

(A)

C

–0.6

–0.4

Collector current I

–0.2

–80

–60

–40

–30

P

C

–20

–10

= 0.9 W

0 –2 –10–6–4 –8

Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio

vs. Collector Current

600

VCE = –5 V
Pulse

500

FE

400

300

200

Ta = 75°C

25

–25

100

DC current transfer ratio h

0

–1 –3 –30 –300–10

Collector Current I

–5

–2

–1

–0.5mA

IB = 0

–100 –1,000

(mA)

C

3

2SB647, 2SB647A

–0.6

(V)

–0.5

CE(sat)

–0.4

–0.3

–1.2

(V)

–1.0

BE(sat)

–0.8

–0.6

IC = 10 I
Pulse

V

BE(sat)

Saturation Voltage

vs. Collector Current

B

Ta = –25°C

25

75

–0.2

–0.1

Collector to emitter saturation voltage V

–0.4

–0.2

Base to emitter saturation voltage V

00

Gain Bandwidth Product

vs. Collector Current

240

VCE = –5 V

200

(MHz)

T

160

120

80

40

Gain bandwidth product f

0

–10 –30 –100 –300 –1,000

Collector Current I

(mA)

C

Ta = 75°C

25

–25

V

CE(sat)

–1 –3 –10 –30 –100 –300 –1,000

Collector Current IC (mA)

Collector Output Capacitance vs.

Collector to Base Voltage

200

f = 1 MHz
I

100

E

= 0

(pF)

ob

50

20

10

5

Collector output capacitance C

2

–2 –5 –10

–1

Collector to Base Voltage V

–50–20 –100

(V)

CB

4

Unit: mm

0.65 ± 0.1

0.75 Max

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

0.7

8.0 ± 0.5

2.3 Max

10.1 Min

3.8 ± 0.3

0.5

1.27

2.54

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 Mod
—
Conforms

0.35 g

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