Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB645
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For power switching and general
purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -15 A
IB Base current -5 A
PC Collector power dissipation
Collector-base voltage Open emitter -200 V
Collector-emitter voltage Open base -200 V
Emitter-base voltage Open collector -5 V
T
=25℃
C
150 W
Tj Junction temperature 150
T
Storage temperature -65~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB645
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
h
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V
(BR)CEO
Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V
CEsat
I
Collector cut-off current VCB=-200V; IE=0 -0.1 mA
CBO
I
Emitter cut-off current VEB=-6V; IC=0 -0.1 mA
EBO
hFE DC current gai n IC=-1A ; VCE=-5V 40 140
fT Transition frequency IC=-0.5A ; VCE=-10V 12 MHz
Classifications
FE
R O
40-80 70-140
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB645
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...