Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB616
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD586
APPLICATIONS
·For power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -5 V
Collector current -5 A
Collector power dissipation TC=25℃ 60 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB616
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
C
BE
FE
f
T
OB
Collector-emitter breakdown voltage IC=-30mA ;IB=0 -100 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-3A ;IB=-0.3A B -1.5 V
Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V
Collector cut-off current VCB=-100V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
DC current gain IC=-1A ; VCE=-5V 50
Transition frequency IC=-1A ; VCE=-5V 11 MHz
Collector output capacitance IE=0;f=1MHz;VCB=-10V 140 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB616
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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