Page 1
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB600
DESCRIPTION
With TO-3 package
·
·High power dissipations
·Complement to type 2SD555
APPLICATIONS
·For use in audio and power
amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -200 V
CBO
V
Collector-emitter voltage Open base -200 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
I
C
P
C
T
j
Collector current -10 A
Collector power dissipation TC=25 200 W
Junction temperature 150
T
Storage temperature -55~200
stg
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB600
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -200 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-10A; IB=-1A -1.5 V
Base-emitter saturation voltage IC=-10A; IB=-1A -2.0 V
Collector cut-off current VCB=-200V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
hFE DC current gain IC=-2A ; VCE=-5V 20
f
T
Transition frequency IC=-0.5A ; VCE=-10V 4 MHz
2
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB600
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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