Page 1
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB558
DESCRIPTION
With TO-3 package
·
·High power dissipation
APPLICATIONS
·For power switching and general
purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -100 V
CBO
V
Collector-emitter voltage Open base -100 V
CEO
V
Emitter-base voltage Open collector -6 V
EBO
I
C
P
C
T
j
T
stg
Collector current -7 A
Collector power dissipation TC=25 60 W
Junction temperature 150
Storage temperature -65~150
Page 2
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB558
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -100 V
(BR)CEO
Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V
(BR)CBO
Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V
CEsat
I
Collector cut-off current VCB=-100V; IE=0 -0.1 mA
CBO
I
Emitter cut-off current VEB=-6V; IC=0 -0.1 mA
EBO
hFE DC current gain IC=-1A ; VCE=-5V 40 140
f
T
Transition frequency IC=-1A ; VCE=-5V 7 MHz
hFE Classifications
R O
40-80 70-140
2
Page 3
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB558
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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