Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB557
DESCRIPTION
·With TO-3 package
·Complement to type 2SD427
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for 50W high-fidelity audio
frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -8 A
IE Emitter current 8 A
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -5 V
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
80 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB557
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 280 pF
Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -120 V
Emitter-base breakdown voltage IE=-10mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V
Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V
Collector cut-off current VCB=-60V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
DC current gain IC=-1A ; VCE=-5V 40 140
DC current gain IC=-5A ; VCE=-5V 20
fT Transition frequency IC=-1A ; VCE=-5V 7 MHz
h
Classifications
FE-1
R O
40-80 70-140
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB557
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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