Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB552
DESCRIPTION
·With TO-3 package
·Complement to type 2SD552
APPLICATIONS
·Power amplifier applications
·Power switching applications
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -15 A
IB Base current -4 A
PC Collector power dissipation TC=25℃ 150 W
Collector-base voltage Open emitter -220 V
Collector-emitter voltage Open base -180 V
Emitter-base voltage Open collector -5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~200 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB552
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V
Collector-emitter saturation voltage IC=-10A; IB=-1A -2.0 V
Base-emitter saturation voltage IC=-10A; IB=-1A -2.5 V
Collector cut-off current VCB=-220V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
hFE DC current gai n IC=-5A ; VCE=-5V 25 80
COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 300 pF
fT Transition frequency IC=-1A ; VCE=-10V 3.5 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB552
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...