Page 1
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB551
DESCRIPTION
With TO-66 package
·
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -50 V
CBO
V
Collector-emitter voltage Open base -50 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
I
C
P
C
T
j
T
stg
Collector current -3 A
Collector power dissipation TC=25 25 W
Junction temperature 150
Storage temperature -55~150
Page 2
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB551
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-base breakdown voltage IC=-1mA; IE=0 -50 V
Collector-emitter breakdown voltage IC=-10mA; IB=0 -50 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V
Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V
Collector cut-off current VCB=-50V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
hFE DC current gain IC=-1A ; VCE=-4V 35 200
f
T
Transition frequency IC=-0.1A ; VCE=-10V 32 MHz
2
Page 3
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB551
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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