Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB548
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SD414
APPLICATIONS
·Designed for use in driver and output
stages of audio frequency amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -0.8 A
PD Total power dissipation
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -5 V
℃)
Ta=25℃
T
=25℃
C
1.0
W
10
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB548
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V
(BR)CEO
I
Emitter-base breakdown voltage
(BR)EBO
V
Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -2.0 V
CEsat
V
Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V
BEsat
I
Collector cut-off current VCB=-80V; IE=0 -1.0
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -1.0
EBO
hFE DC current gai n IC=-0.2A ; VCE=-5V 40 320
COB Output capacitance IE=0; VCB=-10V;f=1MHz 25 pF
fT Transition frequency IC=-0.1A ; VCE=-5V 70 MHz
=-50μA ;IC=0
E
-5 V
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB548
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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