Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2SB532
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Power Dissipation: P
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= -80V(Min)
(BR)CEO
= 60W(Max)@TC=25℃
C
=25℃)
a
V
V
V
T
CBO
CEO
EBO
I
C
P
C
T
J
stg
Collector-Base Voltage -80 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -5 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature -65~150 ℃
60 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2SB532
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
f
T
(on)
Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -80 V
Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -2.0 V
Base-Emitter On Voltage IC= -4A; VCE= -5V -1.5 V
Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA
Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA
DC Current Gain IC= -1A; VCE= -5V 80
DC Current Gain IC= -4A; VCE= -5V 20
Current-Gain—Bandwidth Product IC= -1A; VCE= -4V 10 MHz
isc Website：www.iscsemi.cn
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