Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB512
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -3 A
PC Collector power dissipation TC=25℃ 25 W
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB512
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=-10mA ,IB=0 -60 V
(BR)CEO
Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gain IC=-0.5A ; VCE=-5V 60 320
fT Transition frequency IC=-0.5A ; VCE=-10V 3 MHz
Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V
Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V
Collector cut-off current VCB=-40V; IE=0 -1.0
Emitter cut-off current VEB=-4V; IC=0 -1.0
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB512
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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