Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB509
DESCRIPTION
·With TO-66 package
·Complement to type 2SD315
APPLICATIONS
·For use in audio frequency power
amplifier application
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -4 A
ICM Collector current-peak -10 A
PC Collector power dissipation TC=25℃ 35 W
Base
Fig.1 simplified outline (TO-66) and symbol
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -5 V
Tj Junction temperature 150 ℃
T
Storage temperature -40~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB509
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-5V 8 MHz
h
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -60 V
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V
Base-emitter on voltage IC=-1A ; VCE=-2V -1.5 V
Collector cut-off current VCB=-20V; IE=0 -0.1 mA
Emitter cut-off current VEB=-4V; IC=0 -1.0 mA
DC current gain IC=-1A ; VCE=-2V 40 320
DC current gain IC=-0.1A ; VCE=-2V 40
Classifications
FE-1
C D E F
40-80 60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB509
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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