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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB407
DESCRIPTION
With TO-3 package
·
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -30 V
CBO
V
Collector-emitter voltage Open base -30 V
CEO
V
Emitter-base voltage Open collector -10 V
EBO
I
C
P
C
T
j
T
stg
Collector current -7 A
Collector power dissipation TC=25 30 W
Junction temperature 150
Storage temperature -55~150
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB407
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -30 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -10 V
Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.0 V
Base-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V
Collector cut-off current VCB=-30V; IE=0 -10 µA
Emitter cut-off current VEB=-10V; IC=0 -10 µA
hFE DC current gain IC=-1A ; VCE=-1.5V 80
2
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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB407
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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