Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2SB337
DESCRIPTION
·Low Collector Saturation Voltage : V
·High Power Dissipation: PC= 30W(Max)@TC=55℃
APPLICATIONS
·Designed for audio frequency power output applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= -0.29V(Typ.) @IC= -4A
CE(sat)
=25℃)
a
V
V
V
T
CBO
CER
EBO
I
C
I
E
I
B
P
C
T
J
stg
Collector-Base Voltage -40 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -10 V
Collector Current-Continuous -7 A
Emitter Current-Continuous 7 A
B Base Current-Continuous -1 A
Collector Power Dissipation
@T
=55℃
C
Junction Temperature 150
Storage Temperature -55~150
30 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2SB337
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CER
Collector-Emitter Breakdown Voltage
= -0.6A; RBE= 68Ω
C
-30 V
V
CE
(sat)
V
BE
(on)
I
CBO
h
FE
Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B 0.29 V
Base-Emitter On Voltage IC= -1A; VCE= -2V 0.38 V
Collector Cutoff Current VCB= -30V; IE= 0 -1.0 mA
DC Current Gain IC= -1A; VCE= -2V 50 165
hFE Classifications
A B
50-100 80-165
isc Website：www.iscsemi.cn
Loading...