Page 1
Transistors
z
z
z
z
z
-2A / -30V Bipolar transistor
2SB1714
zApplications!!!!!!!!!!!!!!!!!! zzDimensions (Unit : mm)
Low frequency amplification, driver
Features
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(V
CE( sat) d -370mV, at IC= -1.5A, IB= -75mA)
Structure
PNP epitaxial planar sili con transistor
Absolute maximum ratings (T a=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Power dissipation
Junction temperature
Storage temperature
∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
Symbol
CBO
V
V
CEO
V
EBO
I
C
CP
I
C
P
tj
tstg
Limits
−30
−30
−6
−2
−4
0.5
2
150
−55 to +150
Unit
V
V
V
∗1
∗2
∗3
A
W
°C
°C
MPT3
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : XY
Packaging specifications
Package MPT3
Packaging type
Code
Part No.
2SB1714
Basic ordering unit (pieces)
2SB1714
Taping
T100
1000
z
Electrical characteristics (Ta=25qC)
Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
Typ.
Max.
Unit
−30
−
−
−30
−
−
−6
−
−
−
−
−100
−
−
−100
−
−180
−370
270
−
−
−
280
20
680
−
−
V
nA
mV
−
MHz
pF
C
= −1mA
I
I
C
= −10μA
E
= −10μA
I
CB
= −30V
V
V
EB
= −6V
I
C/IB
= −1.5A/ −75A
CE
= −2V, IC= −200mA
V
CE
= −2V, IE=200mA , f=100MHz
V
CB
= −10V , IE=0mA , f=1MHz
V
Rev.A 1/2
Page 2
Transistors
z
Electrical characteristics curves
10
VBE=2V
Pulsed
(A)
C
Ta=100 C
1
0.1
COLLECTOR CURRENT :I
0.01
0.1 1 10
BASE TO EMITTER CURRENT : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25 C
Ta=−40 C
1000
Ta=100 C
FE
Ta=25 C
VCE= −2V
Pulsed
Ta=−40 C
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC(A)
Fig.2 DV current gain
vs. collector current
2SB1714
10
(V)
IC/IB=20/1
Pulsed
CE(sat)
1
0.1
0.01
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
Ta=−40 C
Ta=25 C
Ta=100 C
10
10
(V)
BE(sat)
1
IC/IB=50/1
=20/1
B
/I
C
I
0.1
BASE SATURATION VOLTAGE : V
0.001 0.01 0.1 1 10
IC/IB=10/1
Ta=25 C
Pulsed
COLLECTOR CURRENT : IC (A)
Fig.4 Base-emitter saturation voltage
vs. collectir current
10000
1000
100
10
SWITCHINGTIME : (ns)
1
0.01
0.1 1
COLLECTOR CURRENT : IC(A)
tstg
tf
Ta=
25 C
VCE= −12V
I
C/IB
=20/1
Pulsed
tdon
tr
Fig.7 Switching time
1000
100
TRANSITION FREQUENCY : fT (MHz)
10
0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter curent
10
Ta=25 C
CE
= −2V
V
f=100MHz
1000
Cib
100
IC=0A
f=1MHz
Ta=25 C
Cob
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
0.001 0.1 1000.01 1 10
EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A 2/2
Page 3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
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of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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