Page 1
2SB1713
Transistors
-3A / -12V Bipolar transistor
2SB1713
zApplications zDimensions (Unit : mm)
Low frequency amplification, driver
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(Typ. = -250mV, at I
C = -1.5A, IB = -30mA)
zStructure
PNP epitaxial planar sili con transistor
zAbsolute maximum ratings (Ta=25°C) zPackaging specifications
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Power dissipation
Junction temperature
Storage temperature
∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
Symbol
CBO
V
V
CEO
V
EBO
I
C
CP
I
C
P
tj
tstg
Limits
−15
−12
−6
−3
∗1
−6
0.5
∗2
∗3
2
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
zElectrical characteristics (T a=25°C)
Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BV
CEO
CBO
BV
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
Typ.
Max.
−12
−
−
−15
−
−
−6
−
−
−
−
−100
−
−
−100
−
−120
−
280
30
−250
680
−
−
∗
270
−
−
MPT3
(1)Base
(2)Collector
(3)Emitter
Part No.
2SB1713
Unit
C
= −1mA
I
V
C
= −10µA
I
I
E
= −10µA
CB
= −15V
V
nA
V
EB
= −6V
mV
IC/IB= −1.5A/ −30mA
CE
= −2V, IC= −500mA
V
−
MHz
CE
= −2V, IE=500mA , f=100MHz
V
pF
CB
= −10V , IE=0mA , f=1MHz
V
Abbreviated symbol : XW
Package MPT3
Packaging type
Code
Basic ordering unit (pieces)
Taping
T100
1000
Rev.A 1/2
Page 2
Transistors
zElectrical characteristics curves
10
(A)
C
1
25˚C
0.1
125˚C
0.01
COLLECTOR CURRENT : I
IC/IB=20/1
Pulsed
0.001
0.1 1
BASE TO EMITTER CURRENT : VBE (V
Fig.1 Grounded emitter propagation
10
V)
(
BE(sat)
− 40˚C
charactereistics
FE
DC CURRENT GAIN : h
10
)
1000
1000
125˚C
25˚C
− 40˚C
100
VCE=−2V
Pulsed
10
0.001 0.01 0.1
COLLECTOR CURRENT : IC (
Fig.2 DC current gain
vs. collector current
110
A)
Ta=25°C
VCE=2V
f=100MHz
2SB1713
1
V)
(
CE(sat)
0.1
0.01
IC/IB=20/1
Pulsed
0.001
COLLECTOR SATURATION VOLTAGE : V
0.001 0.01 0.1 1
COLLECTOR CURRENT : IC (
Fig.3 Collector-emitter saturation voltage
1000
vs. collector current
Cib
125˚C
25˚C
− 40˚C
I
C
=0A
f=1MHz
Ta=25
10
A)
°C
1
BASE SATURATION VOLTAGE : V
0.1
0.001 0.01 0.1 1
25˚C
− 40˚C
125˚C
IC/IB=20/1
Pulsed
COLLECTOR CURRENT : IC (
Fig.4 Base−emitter saturation voltage
vs.collector current
Cob
100
TRANSITION FREQUENCY : fr (MHz)
10
10
A)
0.01 0.1 1 10
EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
E
(A)
100
10
EMITTER INPUT CAPACITANCE : Cib (pF)
0.001 0.01 0.1 1 10
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V
Fig 6. Emitter input capacitance vs. emitter-base volatage
Collector output capacitance vs. collector-base voltage
100
CB
(V)
Rev.A 2/2
Page 3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
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Appendix1-Rev2.0
Page 4
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