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SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1658
ESCRIPTION
D
·With TO-126 package
·Low collector saturation voltage
·High DC current gain
APPLICATIONS
·For audio frequency amplifier
and switching applications
PINNING
PIN DESCRIPTION
1 Emitter
2
3 Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -30 V
CBO
V
Collector-emitter voltage Open base -30 V
CEO
V
Emitter-base voltage Open collector -6 V
EBO
I
C
ICM Collector current-Peak -10 A
I
B
P
T
Collector current (DC) -5 A
Base current (DC) -2 A
Ta=25 0.1
Total power dissipation
TC=25 10
W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
Page 2
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1658
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V
Collector-emitter saturation voltage IC=-1A; IB=-50mA -0.15 V
Collector-emitter saturation voltage IC=-2A; IB=-100mA -0.25 V
Collector-emitter saturation voltage IC=-4A; IB=-200mA -0.5 V
Base-emitter saturation voltage IC=-1A; IB=-100mA -1.5 V
Collector cut-off current VCB=-30V; IE=0 -0.1 µA
Emitter cut-off current VEB=-6V; IC=0 -0.1 µA
DC current gain IC=-1A ; VCE=-2V 150 600
DC current gain IC=-4A ; VCE=-2V 50
f
T
Transition frequency IC=-50mA ; VCE=-10V 95 MHz
COB Collector output capacitance IE=0;f=1MHz ; VCB=-10V 100 pF
2
Page 3
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1658
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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