Page 1
DATA SHEET
PACKAGE DIMENSIONS
in millimeters (inches)
8.5 MAX.
(0.334 MAX.)
1.2
(0.047)
1.2
(0.047)
0.8
(0.031)
2.3
(0.090)
1.
2.
3.
Emitter
Collector connected to mounting plane
Base
2.3
(0.090)
+0.08
−0.05
0.55
(0.021)
+0.08
−0.05
123
12.0 MAX.
(0.472 MAX.)
3.8 ± 0.2 (0.149)
φ
φ
φ
φ
3.2 ± 0.2
( 0.126)
2.5 ± 0.2
(0.098)
13.0 MIN.
(0.512 MIN.)
2.8 MAX.
(0.110 MAX.)
3.2 ± 0.2 ( 0.126)
AUDIO FREQUENCY AMPLIFIER, SWITCHING
PNP SILICON EPITAXIAL TRANSISTORS
FEATURES
• Low VCE(sat)
VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA)
• High DC Current Gain
hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage V
Collector to Emitter Volteage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (Pulse)* I
Base Current (DC) I
* PW ≤ 10ms, Duty Cycle ≤ 10 %
Maximum Power Dissipation
Total Power Dissipation (T
Total Power Dissipation (T
C = 25 °C) PT 10 W
A = 25 °C) PT 1.0 W
Maximum Temperature
Junction Temperature Tj 150 °C
Storage Temperature T
CB0 −30 V
CE0 −30 V
EB0 −6.0 V
C(DC) −5.0 A
C(Pulse) −8.0 A
B(DC) −1.0 A
stg −55 to 150 °C
SILICON TRANSISTOR
2SB1657
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Document No. D10627EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Collector Cutoff Currnet ICB0 VCB = −30 V, IE = 0 −100 nA
Emitter Cutoff Current IEB0 VEB = −6.0 V, IC = 0 −100 nA
DC Current Gain hFE1 VCE = −2.0 V, IC = −0.5 A 150 600
DC Current Gain hFE2 VCE = −2.0 V, IC = −3.0 A 70
Collector Saturation Voltage VCE(sat)1 IC = −0.5 A, IB = −25 mA −0.08 −0.15 V
Collector Saturation Voltage VCE(sat)2 IC = −1.0 A, IB = −50 mA −0.13 −0.25 V
Collector Saturation Voltage VCE(sat)3 IC = −2.0 A, IB = −100 mA −0.24 −0.40 V
Collector Saturation Voltage VCE(sat)4 IC = −3.0 V, IB = −75 mA −0.46 −1.0 V
Base Saturation Voltage VBE(sat) IC = −1.0 A, IB = −50 mA −0.83 −1.50 V
Gain Bandwidth Product fT VCE = −10 V, IE = −50 mA 75 MHz
Output Capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 60 pF
characteristics SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
The information in this document is subject to change without notice.
−
−
©
1996
Page 2
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
2SB1657
80
60
40
dT - Percentage of Rated Power - %
20
TC -Case Temperature - °C
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
14
S/b Limited
Dissipation Limited
140120100806040200
160
12
10
8
6
4
- Total Power Dissipation - W
T
P
2
0
TC -Case Temperature - °C
14012010080604020
160
2
Page 3
−100
2SB1657
FORWARD BIAS SAFE OPERATING AREA
−10
I
C(DC)
- Collector Current - A
−1
C
I
TC = 25 °C
Single Pulse
−0.1
I
C(pulse)
Power Dissipation Limited
100 ms
VCE - Collector to Emitter Voltage - V
PW = 0.1 ms
1 ms
10 ms
S/b Limited
−100−10−1−0.1
3
Page 4
COLLECTOR TO EMITTER VOLTAGE vs COLLECTOR CURRENT
−4.0
2SB1657
IC-Collector Current-A
1000
−3.0
−16 mA
−12 mA
−2.0
−8mA
−1.0
IB = −4 mA
−6−5−4−3−2−10
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs COLLECTOR CURRENT
100
hFE - DC Current Gain
10
I
C - Collector Current - A
VC E = −2 V
−1 −10−100 m−10 m−1 m
4
Page 5
COLLECTOR SATURATION VOLTAGE vs COLLECTOR CURRENT
−10
IC/IB = 20
−1
−0.1
- Collector Saturation Voltage - V
CE(sat)
V
2SB1657
−0.01
−10
−1
−10−1−0.1−0.01
IC - Collector Current - A
BASE SATURATION VOLTAGE vs COLLECTOR CURRENT
IC/IB = 20
−0.1
- Base Saturation Voltage - V
BE(sat)
V
−0.01
−10−1−0.1−0.01
IC - Collector Current - A
5
Page 6
OUTPUT CAPACITANCE vs COLLECTOR TO BASE VOLTAGE
1000
100
10
Cob - Output Capacitance - pF
2SB1657
1
VCB - Collector to Base Voltage - V
−100−10−1−0.1
6
Page 7
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Semiconductor device package manual C10943X
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
2SB1657
7
Page 8
2SB1657
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
8
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