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∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Darlington 2SB1649
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
θj-a
–
t Characteristics
f
T
–
IE Characteristics
(Typical)
0
–3
–2
–1
–0.2
–1–0.5 –10–5 –200–100–50
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=–10A
I
C
=–15A
IC =–5A
0
–15
–10
–5
0–3–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (CaseT emp)
–30˚C (CaseT emp)
–0.2 –0.5 –1 –5 –10 –15
Collector Current I
C(A)
DC Current Gain hFE
(VCE=–4V)
1,000
10,000
50,000
5,000
Typ
(VCE=–4V)
–0.2 –1–0.5 –5 –10 –15
1000
5000
10000
50000
Collector Current IC(A)
DC Current Gain hFE
25˚C
–30˚C
125˚C
Time t(ms)
0.1
1
3
0.5
1 10 100 1000 2000
Transient Thermal Resistance θj-a(˚C/W)
0.02 0.10.05 0.5 1 5 10
0
40
20
60
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
100
80
60
40
20
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
–10mA
–50mA
–3mA
0
0
–5
–10
–15
–2 –6–4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–1.5mA
–1.0mA
–0.8mA
I
B
=–0.3mA
–0.5mA
–2mA
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1649
–150
–150
–5
–15
–1
85(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1649
–100
max
–100max
–150min
5000min∗
–2.5
max
–3.0max
45typ
320typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=–150V
V
EB=–5V
I
C=–30mA
V
CE=–4V, IC=–10A
I
C=–10A, IB=–10mA
I
C=–10A, IB=–10mA
V
CE=–12V, IE=2A
V
CB=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB2
(V)
5
I
B2
(mA)
10
t
on
(µs)
0.7typ
t
stg
(µs)
1.6typ
t
f
(µs)
1.1typ
I
B1
(mA)
–10
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45
±0.1
ø3.3
±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45
±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
E
Equivalent circuit
(70Ω)
B
C
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