Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1640
DESCRIPTION
·With ITO-220 package
·Low collector saturation voltage
·Complement to type 2SD2525
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -3 A
IB Base current -0.5 A
PC Collector power dissipation TC=25℃ 1.8 W
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1640
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-5V 9 MHz
COB Output capacitance IE=0; VCB=-10V;f=1MHz 50 pF
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -60 V
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 -1.5 V
Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.75 -1.0 V
Collector cut-off current VCB=-60V ;IE=0 -10
Emitter cut-off current VEB=-7V ;IC=0 -10
DC current gain IC=-0.5A ; VCE=-5V 100 320
DC current gain IC=-2A ; VCE=-5V 15
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1640
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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