Page 1
Po wer Transistors
2SB1631
Silicon PNP epitaxial planar type
For power amplification
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
Allowing automatic insertion with radial taping
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
–60
–60
–6
–6
–3
–1
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
4.2±0.2
13.0±0.2
18.0±0.5
Solder Dip
C1.0
123
2.5±0.2 2.5±0.2
2.5±0.2
0.65±0.1
1.05±0.10.35±0.1
0.55±0.1
1.2±0.1
Unit: mm
5.0±0.1
1.010.0±0.2
90°
C1.0
2.25±0.2
0.55±0.1
1:Base
2:Collector
3:Emitter
MT4 Type Package
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
hFE Rank classification
Rank Q P
h
300 to 500 400 to 700
FE
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
f
T
=25˚C)
Conditions
VCB = –60V, IE = 0
VEB = –40V, IC = 0
VEB = –6V, IC = 0
IC = –25mA, IB = 0
VCE = –4V, IC = – 0.5A
IC = –2A, IB = – 0.05A
VCE = –12V, IC = – 0.2A, f = 10MHz
min
–60
300
typ30max
–100
–100
–100
700
–1
Unit
µA
µA
µA
V
V
MHz
1
Page 2
Po wer Transistors 2SB1631
PC—Ta IC—V
20
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
Collector current IC (A
(1) TC=Ta
(2) Without heat sink
=2.0W)
(P
C
(1)
(2)
V
CE(sat)—IC
IC/IB=40
25˚C
TC=100˚C
–25˚C
– 0.1 –1 –10
– 0.3 –3
)
)
CE
–6
–5
)
A
(
–4
C
–3
–2
IB=–100mA
–80mA
–60mA
–40mA
–20mA
–10mA
Collector current I
–1
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE—I
C
10000
FE
3000
TC=100˚C
1000
–25˚C
300
100
30
Forward current transfer ratio h
10
– 0.01
– 0.1 –1 –10
– 0.03
VCE=–4V
25˚C
– 0.3 –3
Collector current IC (A
TC=25˚C
–5mA
–2mA
)
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
1000
)
300
MHz
(
T
100
30
10
3
Transition frequency f
1
– 0.01
IC—V
BE
VCE=–4V
–25˚C
fT—I
C
– 0.3 –3
25˚C
VCE=–12V
f=10MHz
T
C
TC=125˚C
– 0.1 –1 –10
– 0.03
Collector current IC (A
)
=25˚C
)
Cob—V
1000
)
pF
(
300
ob
100
30
10
3
Collector output capacitance C
1
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
t
0.3
0.1
Switching time t
0.03
0.01
on
0–8–2 –6–4
Collector current IC (A
, tf — I
stg
t
f
C
Pulsed tw=1ms
Duty cycle=1%
=40
I
C/IB
)
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
t
stg
Area of safe operation (ASO)
–100
–30
)
–10
A
I
(
CP
C
–3
I
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
DC
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
)
Page 3
Po wer Transistors 2SB1631
R
—t
th(t)
10000
)
1000
˚C/W
(
(t)
th
100
10
1
Thermal resistance R
0.1
–4
10
–3
10
was measured at Ta=25˚C and under natural convection.
Note: R
th
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
–1
–2
10
Time t (s
1010
110
10
)
(1)
(2)
3
2
4
10
3
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