Datasheet 2SB1629 Datasheet (Panasonic)

Po wer Transistors

2SB1629

Silicon PNP epitaxial planar type

For power amplification

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation

TC=25°C Ta=25°C

Junction temperature Storage temperature

Symbol

V V V I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

–60 –60

–6 –6 –3 –1 40

2

150

–55 to +150

FE

Unit

W

˚C ˚C

Unit: mm

4.6±0.2

15.0±0.313.7

–0.2

8.0±0.2

4.1±0.2

Solder Dip

7°

9.9±0.3

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

231

φ3.2±0.1

+0.5

V V V A A A

TO–220E Full Pack Package

2.9±0.2

2.6±0.1

0.7±0.1

1:Base 2:Collector 3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency

*

hFE Rank classification

Rank Q P

h

300 to 500 400 to 700

FE

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

f

T

=25˚C)

Conditions

VCB = –60V, IE = 0 VEB = –40V, IB = 0 VEB = –6V, IC = 0 IC = –25mA, IB = 0 VCE = –4V, IC = – 0.5A IC = –2A, IB = – 0.05A VCE = –12V, IC = – 0.2A, f = 10MHz

min

–60 300

typ30max

–100 –100 –100

700

–1

Unit

µA µA µA

V

MHz

1

Po wer Transistors 2SB1629

PC—Ta IC—V

60

) W

(

50

C

40

30

20

(2)

10

(3)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

(1) TC=Ta (2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

(1)

(4)

V

CE(sat)—IC

TC=100˚C

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

)

IC/IB=40

25˚C

–25˚C

)

CE

–6

–5

) A

(

–4

C

–3

–2

IB=–100mA

–80mA

–60mA

–40mA

–20mA

–10mA

Collector current I

–1

0

0 –12–10–8–2 –6–4

Collector to emitter voltage VCE (V

hFE—I

C

10000

FE

3000

TC=100˚C

1000

–25˚C

300

100

30

Forward current transfer ratio h

10

– 0.01

– 0.1 –1 –10

– 0.03

VCE=–4V

25˚C

– 0.3 –3

Collector current IC (A

TC=25˚C

–5mA

–2mA

)

6

5

) A

(

4

C

3

2

Collector current I

1

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

)

300

MHz

(

T

100

30

10

3

Transition frequency f

1

– 0.01

IC—V

BE

VCE=–4V

–25˚C

fT—I

C

– 0.3 –3

25˚C

VCE=–12V f=10MHz T

C

TC=125˚C

– 0.1 –1 –10

– 0.03

Collector current IC (A

)

=25˚C

)

Cob—V

1000

) pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

2

CB

IE=0 f=1MHz

=25˚C

T

C

)

ton, t

100

30

) µs

(

10

f

,t

stg

3

,t

on

1

t

0.3

0.1

Switching time t

0.03

0.01

on

0–8–2 –6–4

Collector current IC (A

, tf — I

stg

t

f

C

Pulsed tw=1ms Duty cycle=1%

=40

I

C/IB

)

(–I

B1=IB2

V

=–50V

CC

=25˚C

T

C

t

stg

Area of safe operation (ASO)

10

I

CP

t=10ms

3

I

C

) A

(

1

C

0.3

0.1

DC

Collector current I

0.03

0.01 –1 –10 –100 –1000–3 –30 –300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

1ms

)

Po wer Transistors 2SB1629

R

—t

th(t)

10000

)

1000

˚C/W

( (t)

th

100

was measured at Ta=25˚C and under natural convection.

Note: R

th

=10V × 0.2A (2W) and without heat sink

(1) P

T

=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink

(2) P

T

(1)

10

1

Thermal resistance R

0.1

–4

10

–3

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10

3