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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB1562
DESCRIPTION
·High DC Current Gain: hFE= 300~1000@ (VCE= -5V , IC= -0.5A)
·Low Saturation Voltage: V
= -0.5V(TYP.)@ (IC= -2A, IB= -20mA)
CE(sat)
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
B
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Collector-Base Voltage -60 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -7 V
Collector Current-Continuous -3 A
Collector Current-Pulse -6 A
B Base Current-Continuous -0.6 A
Collector Power Dissipation
=25℃
@T
C
Collector Power Dissipation
=25℃
@T
a
25
2
Junction Temperature 150 ℃
Storage Temperature -55~150 ℃
W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB1562
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
(BR)CEO
CE
(sat)
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -60 V
Collector-Emitter Saturation Voltage IC= -2A; IB= -20mA B -0.5 -1.5 V
Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -0.7 -1.0 V
Collector Cutoff Current VCB= -60V ; IE=0 -100 μA
Emitter Cutoff Current VEB= -7V; IC=0 -100 μA
DC Current Gain IC= -0.5A ; VCE= -5V 300 1000
DC Current Gain IC= -2A ; VCE= -5V 100
Output Capacitance
I
=0 ; VCB= -10V;f
E
= 1.0MHz
test
60 pF
isc Website：www.iscsemi.cn
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