Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
+
+
CBO
V
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
zElectrical characteristics (Ta=25°C)
ParameterSymbolMin.Typ.Max.UnitConditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
h
f
CBO
CEO
EBO
FE1
FE2
T
Limits
−60
−60
−6
−2
−6
0.5
2
150
−55 to +150
−60
−60
−6
−
−
−
120
45
−
−
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
(3)(2)(1)
0.5
1.51.5
(1)Base
(2)Collector
(3)Emitter
3.0
Unit
V
V
V
A
∗
1
A
W
∗
2
°C
°C
I
−
−
−
−
−
−0.15
−
−
200
23
−
−
−
−0.1
−0.1
−0.35
270
−
−
−
V
V
V
µA
µA
V
−
−
MHz
pF
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
EB
=−5V
V
I
C/IB
=−1A/−50mA
CE/IC
V
CE/IC
V
CE
=−2V, IE=0.5A, f=100MHz
V
V
CB
=−10V, IE=0A, f=1MHz
0.5
2.5
4.0
1.0
0.40.4
=−2V/−0.5A
=−2V/−1.5A
1.5
0.4
∗
∗
Rev.A 1/3
Page 2
Transistors
zPackaging specifications and h
Type2SB1561
−
12mA
10mA
−
−
8mA
−
6mA
−4mA
I
B
MPT3
Q
BL
T100
1000
=−
2mA
Ta=
VCE= −5V
∗
25
−2V
−1V
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
∗
FE
z Electrical characteristic curves
−2.0
(A)
C
−1.6
−1.2
CURRENT : l
−0.8
−0.4
20mA
−
−18mA
−14mA
−16mA
COLLECTOR
0.0
0−4−5−2−3−1
COLLECTOR TO EMITTER VOLTAGE
Fig.1 Grounded emitter output
characteristics
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−5m −10m−100m−100m
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
FE
−5
−2
−1
(A)
C
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−5m
COLLECTOR CURRENT : I
−2m
−1m
: VCE (V)
−1000
C
°
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−5−1
−1
−5m −10m−100m−100m
COLLECTOR SATURATION VOLTAGE : V
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
−0.4−0.8−1.2−1.60
BASE TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter propagation
characteristics
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : IC (A)
2SB1561
V
CE
=
−
2V
°C
C
°
100
25°C
=
−40
Ta
BE
(V)
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−5m −10m−100m−100m
=100
Ta
25
°C
°C
40
−
COLLECTOR CURRENT : IC (A)
C
°
Fig.3 DC current gain vs.
collector current ( Ι )
−1000
20
=
B
/I
C
I
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−5−1
−1
−5m −10m−100m−100m
COLLECTOR SATURATION VOLTAGE : V
=50
B
/I
C
I
20
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
VCE=2V
Ta=25°C
−5−1
−5−1
Rev.A 2/3
Page 3
Transistors
2SB1561
1000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
2m5m 10m 20m 50m100m200m 500m 12
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
Ta=25°C
=−2V
CE
V
1000
(pF)
500
(pF)
200
100
50
20
10
5
2
1
−0.1−1−10−100
EMITTER INPUT CAPACITANCE : Cib
COLLECTOR OUTPUT CAPACITANCE : Cob
COLLECTOR TO BASE VOLTAGE : VCE (V)
EMITTER TO BASE VOLTAGE : V
Cib
Cob
Ta=25°C
1MHz
f=
0A
=
E
I
0A
=
C
I
EB
Fig.8 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
(V)
50
(A)
20
C
10
Ic max(Pulse)
5
2
1
500m
200m
100m
50m
COLLECTOR CURRENT : l
Ta=25°C
20m
Single pulse
10m
0.210.52510 2050 100 200 500
Pw
P
W
=
=
P
10ms
100ms
W
=1ms
DC
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Page 5
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