Datasheet 2SB1561 Datasheet (ROHM)

Page 1

2SB1561

Transistors

Medium Power Transistor (−60V, −2A)

2SB1561
zFeatures
1) Low saturation voltage , typically V
CE (sat) = −0.15V at IC / IB = −1A / −50mA.
2) Collector-emitter voltage = −60V
3) Pc = 2W (on 40×40×0.7mm ceramic board).
4) Complements the 2SD2391.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board.
+
+
CBO
V VCEO VEBO
IC
ICP PC
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage
DC current transfer ratio Transition frequency
Output capacitance
∗ Measured using pulse current
BV BV BV
I I
V
CE(sat)
Cob
CBO EBO
h h
f
CBO CEO EBO
FE1 FE2 T
Limits
−60
−60
−6
−2
−6
0.5 2
150
−55 to +150
−60
−60
−6
−
−
−
120
45
−
−
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
(3)(2)(1)
0.5
1.51.5
(1)Base (2)Collector (3)Emitter
3.0
Unit
V V V A
∗
1
A
W
∗
2
°C °C
I
−
−
−
−
−
−0.15
−
−
200
23
−
−
−
−0.1
−0.1
−0.35
270
−
−
−
V V V
µA µA
V
−
−
MHz
pF
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
EB
=−5V
V I
C/IB
=−1A/−50mA
CE/IC
V
CE/IC
V
CE
=−2V, IE=0.5A, f=100MHz
V V
CB
=−10V, IE=0A, f=1MHz
0.5
2.5
4.0
1.0
0.40.4
=−2V/−0.5A =−2V/−1.5A
1.5
0.4
∗
∗
Rev.A 1/3
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Transistors
zPackaging specifications and h
Type 2SB1561
−
12mA
10mA
−
−
8mA
−
6mA
−4mA
I
B
MPT3
Q
BL T100 1000
=−
2mA
Ta=
VCE= −5V
∗
25
−2V
−1V
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
∗
FE
z Electrical characteristic curves
−2.0
(A)
C
−1.6
−1.2
CURRENT : l
−0.8
−0.4
20mA
−
−18mA
−14mA
−16mA
COLLECTOR
0.0 0 −4 −5−2 −3−1
COLLECTOR TO EMITTER VOLTAGE
Fig.1 Grounded emitter output
characteristics
1000
500
FE
200 100
50
20 10
5
DC CURRENT GAIN : h
2 1
−5m −10m−100m −100m
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( ΙΙ )
FE
−5
−2
−1
(A)
C
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−5m
COLLECTOR CURRENT : I
−2m
−1m
: VCE (V)
−1000
C
°
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−5−1
−1
−5m −10m−100m −100m
COLLECTOR SATURATION VOLTAGE : V
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
−0.4 −0.8 −1.2 −1.60
BASE TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter propagation
characteristics
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : IC (A)
2SB1561
V
CE
=
−
2V
°C
C
°
100
25°C
=
−40
Ta
BE
(V)
1000
500
FE
200 100
50
20 10
5
DC CURRENT GAIN : h
2 1
−5m −10m−100m −100m
=100
Ta
25
°C
°C
40
−
COLLECTOR CURRENT : IC (A)
C
°
Fig.3 DC current gain vs.
collector current ( Ι )
−1000
20
=
B
/I
C
I
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−5−1
−1
−5m −10m−100m −100m
COLLECTOR SATURATION VOLTAGE : V
=50
B
/I
C
I
20 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
VCE=2V
Ta=25°C
−5−1
−5−1
Rev.A 2/3
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Transistors
2SB1561
1000
500
(MHz)
T
200 100
50
20 10
5
2
TRANSITION FREQUENCY : f
1
2m 5m 10m 20m 50m100m200m 500m 1 2
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
Ta=25°C
=−2V
CE
V
1000
(pF)
500
(pF)
200 100
50
20 10
5
2 1
−0.1 −1 −10 −100
EMITTER INPUT CAPACITANCE : Cib
COLLECTOR OUTPUT CAPACITANCE : Cob
COLLECTOR TO BASE VOLTAGE : VCE (V) EMITTER TO BASE VOLTAGE : V
Cib
Cob
Ta=25°C
1MHz
f=
0A
=
E
I
0A
=
C
I
EB
Fig.8 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
(V)
50
(A)
20
C
10
Ic max(Pulse)
5 2
1
500m 200m
100m
50m
COLLECTOR CURRENT : l
Ta=25°C
20m
Single pulse
10m
0.210.5 2 5 10 20 50 100 200 500
Pw
P
W
=
=
P
10ms
100ms
W
=1ms
DC
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
Rev.A 3/3
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Appendix
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Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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