Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Darlington Power Transistors 2SB1558
DESCRIPTION
·With TO-3PI package
·Complement to type 2SD2387
APPLICATIONS
·For power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PI) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -8 A
IB Base current -0.1 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter -140 V
Collector-emitter voltage Open base -140 V
Emitter-base voltage Open collector -5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Darlington Power Transistors 2SB1558
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
VBE Base-emitter on voltage IC=-7A ; VCE=-5V -3.0 V
I
CBO
I
EBO
h
FE-1
h
FE-2
Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 170 pF
fT Transition frequency IC=-1A ; VCE=-5V 30 MHz
h
FE-1
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -140 V
Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V
Collector cut-off current VCB=-140V; IE=0 -5
Emitter cut-off current VEB=-5V; IC=0 -5
DC current gain IC=-7A ; VCE=-5V 5000 30000
DC current gain IC=-12A ; VCE=-5V 2000
μA
μA
Classifications
A B C
5000-12000 9000-18000 15000-30000
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Darlington Power Transistors 2SB1558
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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