Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1470
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD2222
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For power amplification
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -5 V
Collector current -8 A
Collector current-peak -15 A
Collector power dissipation
℃)
TC=25℃
=25℃
T
a
120
W
3.5
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1470
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter breakdown voltage IC=-30mA ;IB=0 -160 V
Collector-emitter saturation voltage IC=-7A ;IB=-7mA B -3.0 V
Base-emitter saturation voltage IC=-7A ;IB=-7mA B -3.0 V
Collector cut-off current VCB=-160V; IE=0 -100 μA
Collector cut-off current VCE=-160V; IB=0 -100 μA
Emitter cut-off current VEB=-5V; IC=0 -100 μA
DC current gain IC=-1A ; VCE=-5V 1000
DC current gain IC=-7A ; VCE=-5V 3500 20000
Transition frequency IC=-0.5A ; VCE=-10V;f=1MHz 20 MHz
Switching times
t
on
Turn-on time 1.0 μs
t
s
t
f
Storage time 1.5 μs
Fall time
h
classifications
FE-2
Q S
3500-10000 7000-20000
I
=-7A ;IB1=-IB2=-7mA
C
V
=-50V
CC
1.2 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1470
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
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