Page 1
Po wer Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2138 and 2SD2138A
Features
■
●
High foward current transfer ratio h
●
High-speed switching
●
Allowing automatic insertion with radial taping
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB1418
2SB1418A
2SB1418
2SB1418A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
Symbol
2SB1418
2SB1418A
2SB1418
2SB1418A
2SB1418
2SB1418A
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
off
FE
=25˚C)
C
Ratings
–60
–80
–60
–80
–5
–4
–2
15
2.0
150
–55 to +150
=25˚C)
VCB = –60V, IB = 0
VCB = –80V, IB = 0
VCE = –30V, IB = 0
VCE = –40V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –2A
VCE = –4V, IC = –2A
IC = –2A, IB = –8mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
4.2±0.2
13.0±0.2
18.0±0.5
Solder Dip
C1.0
123
2.5±0.2 2.5±0.2
Internal Connection
B
min
–60
–80
1000
2000
2.5±0.2
0.65±0.1
1.05±0.10.35±0.1
0.55±0.1
typ
20
0.2
2
1.2±0.1
Unit: mm
5.0±0.1
1.010.0±0.2
90°
C1.0
2.25±0.2
0.55±0.1
1:Base
2:Collector
3:Emitter
MT4 Type Package
C
E
max
–100
–100
–100
–100
–100
Unit
µA
µA
µA
V
10000
–2.8
–2.5
V
V
MHz
µs
µs
*
h
Rank classification
FE2
Rank Q P
h
FE2
2000 to 5000
4000 to 10000
1
Page 2
Po wer Transistors 2SB1418, 2SB1418A
PC—Ta IC—V
20
(2)
IC—V
TC=100˚C
25˚C
(1) TC=Ta
(2) Without heat sink
=2.0W)
(P
C
(1)
BE
–25˚C
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0–4–1 –3–2
Base to emitter voltage VBE (V
VCE=–4V
CE
)
–6
–5
)
A
(
–4
C
–3
–2
IB=–2.0mA
–1.8mA
TC=25˚C
–1.6mA
– 0.8mA
– 0.6mA
– 0.4mA
–1.4mA
–1.2mA
–1.0mA
Collector current I
–1
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
300
100
Forward current transfer ratio h
30
10
– 0.01
)
TC=100˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
– 0.2mA
C
VCE=–4V
25˚C
–25˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
1000
)
pF
(
300
ob
100
30
10
Collector output capacitance C
V
CE(sat)—IC
IC/IB=250
25˚C
TC=100˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
Cob — V
3
1
–1 –3 –10 –30 –100
CB
–25˚C
)
IE=0
f=1MHz
T
=25˚C
C
Collector to base voltage VCB (V
)
Area of safe operation (ASO) R
–100
–30
)
–10
A
(
I
CP
C
–3
I
C
–1
10ms
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
2SB1418A
2SB1418
Collector to emitter voltage VCE (V
10000
)
1000
˚C/W
(
(t)
th
100
10
1
Thermal resistance R
0.1
–4
10
)
–3
10
2
—t
th(t)
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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