Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1381
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2079
·Low collector saturation voltage
·High DC current gain
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -5 A
ICM Collector current-peak -8 A
IB Base current -0.5 A
PC Collector dissipation
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
℃)
Ta=25℃
=25℃
T
C
2
W
30
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1381
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
ton Turn-on time 0.8 μs
ts Storage time 2.5 μs
Collector-emitter breakdown voltage IC=-30mA ;IB=0 -100 V
Collector-emitter saturation voltage IC=-2.5A; IB=-5mA -1.5 V
Collector-emitter saturation voltage IC=-5A; IB=-20mA -3.0 V
Base-emitter saturation voltage IC=-2.5A; IB=-5mA -2.5 V
Collector cut-off current VCB=-100V; IE=0 -100 μA
Emitter cut-off current VEB=-6V; IC=0 -2.5 mA
DC current gain IC=-2.5A ; VCE=-3V 1500 15000
DC current gain IC=-7A ; VCE=-3V 500
IB1=-IB2=-5mA
=-25V ,RL=10Ω
V
CC
tf Fall time
2.0 μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1381
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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