Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1375
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2012
·Low collector saturation voltage:
V
=-1.5V(Max) at IC=-2A,IB=-0.2A
CE(SAT)
·Collector power dissipation:
=25W(TC=25℃)
P
C
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -3 A
IB Base current -0.5 A
PC Collector dissipation
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -7 V
℃)
Ta=25℃
TC=25℃
2.0
W
25
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1375
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-5V 9 MHz
COB Collector output capacitance IE=0; f=1MHz;VCB=-10V 50 pF
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -60 V
Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 -1.5 V
Base-emitter voltage IC=-0.5A;VCE=-5V -0.75 -1.0 V
Collector cut-off current VCB=-60V; IE=0 -10
Emitter cut-off current VEB=-7V; IC=0 -10
DC current gain IC=-0.5A ; VCE=-5V 100 320
DC current gain IC=-2A ; VCE=-5V 15
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1375
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1375
4
Loading...