Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1369
DESCRIPTION
·With TO-220 package
·High collector power dissipation
·High current capability
APPLICATIONS
·For general purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -60 V
CBO
V
Collector -emitter voltage Open base -60 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -3 A
ICM Collector current-peak -6 A
Ta=25℃ 2.0
PC Collector power dissipation
=25℃ 40
T
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1369
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-0.5A ; VCE=-5V 100 320
fT Transition frequency IC=-0.5A; VCE=-5V 15 MHz
COB Collector output capacitance f=1MHz ; VCB=10V 80 pF
Collector-emitter breakdown voltage IC=-1mA; IB=0 -60 V
Collector-base breakdown voltage IC=-50μA; IE=0 -60 V
Emitter-base breakdown voltage IE=-50μA; IC=0 -5 V
Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V
Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V
Collector cut-off current VCB=-60V; IE=0 -10 μA
Emitter cut-off current VEB=-4V; IC=0 -10 μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1369
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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