Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1368
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2060
·Low collector saturation voltage:
V
=-1.7V(Max) at IC=-3A,IB=-0.3A
CE(SAT)
·Collector power dissipation:
=25W(TC=25℃)
P
C
APPLICATIONS
·With general purpose applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -4 A
IB Base current -0.4 A
PC Collector dissipation
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -5 V
℃)
Ta=25℃ 2.0
W
TC=25℃ 25
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1368
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz
COB Collector output capacitance f=1MHz;VCB=10V 130 pF
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -80 V
Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.0 -1.7 V
Base-emitter on voltage IC=-3A;VCE=-5V -1.0 -1.5 V
Collector cut-off current VCB=-80V; IE=0 -30
Emitter cut-off current VEB=-5V; IC=0 -100
DC current gain IC=-0.5A ; VCE=-5V 40 240
DC current gain IC=-3A ; VCE=-5V 15
μA
μA
h
Classifications
FE-1
R O Y
40-80 70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1368
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1368
4
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