Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1366
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2058
·Low collector saturation voltage:
V
=-1.0V(Max) at IC=-2A,IB=-0.2A
CE(SAT)
·Collector power dissipation:
=25W(TC=25℃)
P
C
APPLICATIONS
·With general purpose applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -3 A
IB Base current -0.5 A
PC Collector dissipation
Collector-base voltage Open emitter -60 V
Collector-emitt er voltage Open base -60 V
Emitter-base voltage Open collector -7 V
Ta=25℃
TC=25℃
2.0
W
25
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1366
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz
COB Collector output capacitance f=1MHz;VCB=-10V 150 pF
Switching times
ton Turn-on time 0.4
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -60 V
Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V
Base-emitter on voltage IC=-0.5A;VCE=-5V -1.0 V
Collector cut-off current VCB=-60V; IE=0 -0.1 mA
Emitter cut-off current VEB=-7V; IC=0 -0.1 mA
DC current gain IC=-0.5A ; VCE=-5V 60 200
DC current gain IC=-3A ; VCE=-5V 20
μs
ts Storage time 1.7
tf Fall time
h
Classifications
FE-1
O Y
60-120 100-200
I
=-2.0A IB1=-IB2=-0.2A
C
VCC=-30V ,RL=15Ω
0.5
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1366
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1366
4
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