Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1362
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Complement to type 2SD2053
APPLICATIONS
·For high power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -9 A
ICM Collector current -peak -15 A
PC Collector power dissipation
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
℃)
T
=25℃
C
100 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1362
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=-25mA; IB=0 -150 V
(BR)CEO
V
Collector-emitter saturation voltage IC=-7A; IB=-0.7A -2.0 V
CEsat
V
Base-emitter on voltage IC=-7A;VCE=-5V -1.8 V
BE
I
Collector cut-off current VCB=-150V; IE=0 -50 μA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -50 μA
EBO
h
DC current gain IC=-20mA ; VCE=-5V 20
FE-1
h
DC current gain IC=-1A ; VCE=-5V 60 200
FE-2
h
DC current gain IC=-7A ; VCE=-5V 15
FE-3
fT Transition frequency IC=-0.5A ; VCE=-5V 15 MHz
COB Collector output capacitance f=1MHz;VCB=-10V 270 pF
h
Classifications
FE-2
Q P
60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1362
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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