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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB1340
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A)
·Complement to Type 2SD1889
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= -120V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
Collector-Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -6 A
Collector Current-Peak -10 A
Collector Power Dissipation
@T
=25℃
a
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
2
W
30
℃
T
stg
Storage Temperature -55~150
isc Website：www.iscsemi.cn
℃
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB1340
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
(BR)CEO
(BR)CBO
CE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -120 V
I
Collector-Base Breakdown Voltage
= -50μA ; IE= 0
C
-120 V
Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA B -1.5 V
Collector Cutoff Current VCB= -120V ; IE= 0 -100
μA
Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA
DC Current Gain IC= -2A ; VCE= -3V 2000 20000
Output Capacitance
Current-Gain—Bandwidth Product
= 0; VCB= -10V; f
I
E
= 0.5A ; VCE= -5V; f
I
E
= 1MHz
test
test
= 10MHz
70 pF
12 MHz
isc Website：www.iscsemi.cn
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