Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1335
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SD1855
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -80 V
CBO
V
Collector -emitter voltage Open base -60 V
CEO
V
Emitter-base voltage Open collector -6 V
EBO
IC Collector current -4 A
PC Collector power dissipation TC=25℃ 30 W
Tj Junction temperature 150 ℃
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1335
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-1A ; VCE=-5V 60 320
fT Transition frequency IC=-0.5A; VCE=-5V 12 MHz
COB Collector output capacitance f=1MHz ; VCB=-10V 100 pF
Collector-emitter breakdown voltage IC=-1mA; IB=0 -60 V
Collector-base breakdown voltage IC=-50μA; IE=0 -80 V
Collector-emitter breakdown voltage IE=-50μA; IC=0 -6 V
Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.0 V
Base-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V
Collector cut-off current VCB=-80V; IE=0 -10 μA
Emitter cut-off current VEB=-6V; IC=0 -10 μA
hFE Classifications
D E F
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1335
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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