Page 1
Po wer Transistors
2SB1317
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1975
Features
■
●
Satisfactory foward current transfer ratio hFE vs. collector current I
characteristics
●
●
●
■
C
Wide area of safe operation (ASO)
High transition frequency f
T
Optimum for the output stage of a HiFi audio amplifier
Absolute Maximum Ratings (T
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Ratings
–180
–180
–5
–25
–15
150
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
6.010.0
26.0±0.520.0±0.5
1.5
2.5
20.0±0.5
1.5
Solder Dip
10.9±0.5
123
φ 3.3±0.2
4.02.0
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
Unit: mm
5.0±0.3
3.0
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3L Package
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE2
Rank Q S P
h
FE2
60 to 120 80 to 160 100 to 200
C
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
=25˚C)
Conditions
VCB = –180V, IE = 0
VEB = –3V, IC = 0
VCE = –5V, IC = –20mA
VCE = –5V, IC = –1A
VCE = –5V, IC = –8A
VCE = –5V, IC = –8A
IC = –10A, IB = –1A
VCE = –5V, IC = – 0.5A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
min
20
60
20
typ
20
450
max
–50
–50
200
–1.8
–2.5
Unit
µA
µA
V
V
MHz
pF
1
Page 2
Po wer Transistors 2SB1317
PC—Ta IC—V
200
)
W
(
C
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
)
–10
V
(
–3
CE(sat)
–1
– 0.3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3.5W)
C
(1)
(3)
(2)
Ambient temperature Ta (˚C
V
CE(sat)—IC
TC=100˚C
25˚C
–25˚C
IC/IB=10
CE
–24
–20
)
A
(
–16
C
–12
–8
IB=–1000mA
–800mA
Collector current I
–4
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
1000
FE
300
TC=100˚C
100
30
25˚C
–25˚C
–700mA
–600mA
–500mA
C
TC=25˚C
–400mA
–300mA
–200mA
–150mA
–100mA
–50mA
VCE=–5V
–24
)
–18
A
(
C
–12
Collector current I
)
1000
)
300
MHz
(
T
100
–6
0
0–4–1 –3–2
30
IC—V
BE
VCE=–5V
25˚C
TC=–25˚C 100˚C
Base to emitter voltage VBE (V
fT—I
C
VCE=–10V
f=1MHz
T
=25˚C
C
)
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
CB
)
IE=0
f=1MHz
=25˚C
T
C
Collector current IC (A
10000
)
pF
(
3000
ob
1000
300
100
30
Cob—V
Collector output capacitance C
10
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
10
3
Forward current transfer ratio h
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
Area of safe operation (ASO)
–100
I
–30
CP
)
I
–10
C
A
(
Collector current I
)
C
– 0.3
– 0.1
– 0.03
– 0.01
100ms
–3
–1
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
)
Non repetitive pulse
=25˚C
T
C
t=10ms
DC
10
3
Transition frequency f
1
– 0.01
)
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
2
Page 3
Po wer Transistors 2SB1317
R
—t
th(t)
10000
)
1000
˚C/W
(
(t)
th
100
was measured at Ta=25˚C and under natural convection.
Note: R
th
=10V × 0.2A (2W) and without heat sink
(1) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(2) P
T
(1)
10
1
Thermal resistance R
0.1
–4
10
–3
(2)
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
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