Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1315
DESCRIPTION
·With TO-3PML package
·Low collector saturation voltage
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -8 A
PC Collector dissipation
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -5 V
℃)
Ta=25℃
T
=25℃
C
3.5
W
65
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1315
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-1A ; VCE=-5V 60 320
fT Transition frequency IC=-1A ; VCE=-5V 65 MHz
COB Collector output capacitance f=1MHz;VCB=-10V 200 pF
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -120 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V
Collector cut-off current VCB=-120V; IE=0 -50
Emitter cut-off current VEB=-5V; IC=0 -50
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1315
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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