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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1292
DESCRIPTION ·
·With TO-220Fa package
·Low saturation voltage
·Complement to type 2SD1832
·Excellent DC current gain characteristics
·Wide area of safe operation
APPLICATIONS
·For use in low frequency power amplifier
applications,power drivers and DC-DC
converters
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -5 A
ICM Collector current-Peak -10 A
PC Collector power dissipation
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -5 V
TC=25℃ 30
W
=25℃
T
a
2
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1292
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-1A ; VCE=-5V 100 320
fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz
Cob Output capacitance IE=0 ; VCB=-10V ,f=1MHz 150 pF
h
Collector-emitter breakdown voltage IC=-1mA , IB=0 -60 V
Collector-base breakdown voltage IC=-50μA , IE=0 -60 V
Emitter-base breakdown voltage IE=-50μA , IC=0 -5 V
Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V
Base-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V
Collector cut-off current VCB=-60V ;IE=0 -10 μA
Emitter cut-off current VEB=-4V; IC=0 -10 μA
Classifications
FE
E F
100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon Power Transistors 2SB1292
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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