Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1287
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SD1765
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -100 V
CBO
V
Collector -emitter voltage Open base -100 V
CEO
V
Emitter-base voltage Open collector -8 V
EBO
IC Collector current -2 A
ICM Collector current-peak -3 A
PC Collector power dissipation
℃)
Ta=25℃
TC=25℃
2
W
20
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1287
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
I
CBO
I
EBO
hFE DC current gain IC=-1A ; VCE=-2V 1000 10000
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 35 pF
Collector-emitter breakdown voltage IC=-5mA; IB=0 -100 V
Collector-base breakdown voltage IC=-50μA; IE=0 -100 V
Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V
Collector cut-off current VCB=-100V; IE=0 -10 μA
Emitter cut-off current VEB=-7V; IC=0 -3.0 mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1287
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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