Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1274
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1913
·High reliability.
·High breakdown voltage
·Low saturation voltage.
·Wide area of safe operation
APPLICATIONS
·60V/3A low-frequency power amplifier
·General power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -3 A
ICM Collector current-peak -8 A
PC Collector dissipation
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -6 V
℃)
TC=25℃
2
20
W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1274
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter voltage IC=-0.5A ; VCE=-5V -0.8 -1.0 V
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz
COB Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF
Collector-base breakdown voltage IC=-1mA; IE=0 -60 V
I
Collector-emitter breakdown voltage
Base-emitter breakdown voltage IE=-1mA; IC=0 -6 V
Collector-emitter saturation voltage IC=-2A ; IB=-0.2A -0.4 -1.0 V
Collector cut-off current VCB=-40V;IE=0 -0.1 mA
Emitter cut-off current VEB=-4V;IC=0 -0.1 mA
DC current gain IC=-0.5A ; VCE=-5V 70 280
DC current gain IC=-3A ; VCE=-5V 20
=-5mA; RBE=∞
C
-60 V
h
classifications
FE-1
Q R S
70-140 100-200 140-280
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1274
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1274
4
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