Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1272
DESCRIPTION ·
·With TO-126 package
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter -base voltage Open collector -7 V
Collector current -2 A
Collector power dissipation TC=25℃ 10 W
Junction temperature 150 ℃
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1272
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
Collector-emitter breakdown voltage IC=-10mA;IB=0 B -100 V
Collector-base breakdown voltage IC=-1mA; IE=0 -100 V
Emitter-base breakdown voltage IE=-5mA;IC=0 -7 V
Collector-emitter saturation voltage IC=-2A; IB=-2mA -2.0 V
Base-emitter saturation voltage IC=-2A; IB=-2mA -2.5 V
Collector cut-off current VCB=100V; IE=0 -0.1 mA
Collector cut-off current VCE=100V; IB=0 -0.5 mA
Emitter cut-off current VEB=-7V; IC=0 -5.0 mA
FE
DC current gain IC=-1A ; VCE=-2V 1000 10000
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1272
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...