Page 1
Po wer Transistors
2SB1254
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1894
Features
■
●
Optimum for 60W HiFi output
●
High foward current transfer ratio h
●
Low collector to emitter saturation voltage V
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
FE
=25˚C)
C
Ratings
–160
–140
–5
–12
–7
70
3
150
–55 to +150
CE(sat)
: < –2.5V
Unit
V
V
V
A
A
W
˚C
˚C
15.0±0.3
11.0±0.2
21.0±0.516.2±0.5
3.5 0.715.0±0.2
12.5
Solder Dip
10.9±0.5
321
TOP–3 Full Pack Package(a)
Internal Connection
B
φ3.2±0.1
2.0±0.2
1.1±0.1
5.45±0.3
Unit: mm
5.0±0.2
3.2
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
C
E
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
5000 to 15000 8000 to 30000
FE2
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = –160V, IE = 0
VCE = –140V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –6A
IC = –6A, IB = –6mA
IC = –6A, IB = –6mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –6A, IB1 = –6mA, IB2 = 6mA,
VCC = –50V
min
140
2000
5000
typ
20
1.0
1.5
1.2
max
–100
–100
–100
30000
–2.5
–3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SB1254
PC—Ta IC—V
80
)
70
W
(
C
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–100
)
V
(
–30
BE(sat)
–10
–3
–1
100˚C
– 0.3
Base to emitter saturation voltage V
– 0.1
– 0.1 –1 –10 –100– 0.3 –3 –30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(P
=3W)
C
(2)
(3)
V
BE(sat)—IC
IC/IB=1000
TC=–25˚C
25˚C
Collector current IC (A
)
CE
–12
IB=–5mA
–10
)
A
(
–8
C
–6
–4
–1mA
– 0.9mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
300
100
Forward current transfer ratio h
30
10
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
– 0.8mA
– 0.7mA
C
TC=100˚C
TC=25˚C
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
VCE=–5V
–25˚C
25˚C
)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
Collector to emitter saturation voltage V
)
1000
)
pF
(
300
ob
100
30
10
Collector output capacitance C
V
CE(sat)—IC
IC/IB=1000
TC=100˚C
25˚C
–25˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
CB
)
IE=0
f=1MHz
T
=25˚C
C
Collector current IC (A
Cob—V
3
1
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
)
100
30
)
µs
(
10
f
,t
stg
3
,t
t
stg
on
t
f
1
t
on
0.3
0.1
Switching time t
0.03
0.01
0 –16–4 –12–8
Collector current IC (A
2
ton, t
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=1000
I
C/IB
)
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
I
CP
)
–10
A
(
I
C
C
–3
10ms
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
)
Page 3
Po wer Transistors 2SB1254
R
—t
th(t)
10000
)
1000
˚C/W
(
(t)
th
100
10
1
Thermal resistance R
0.1
–4
10
Note: Rth was measured at Ta=25˚C and under natural convection.
=10V × 0.3A (3W) and without heat sink
(1) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(2) P
T
–3
10
–1
–2
10
Time t (s
1010
110
10
)
(1)
(2)
3
2
4
10
3
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