Page 1
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB1252
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1892
Features
■
●
Optimum for 35W HiFi output
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage V
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
=25˚C)
C
Ratings
–120
–100
–5
–8
–5
45
150
–55 to +150
2
CE(sat)
: < 2.5V
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
5000 to 15000 8000 to 30000
FE2
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = –120V, IE = 0
VCE = –100V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –4A
IC = –4A, IB = –4mA
IC = –4A, IB = –4mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –4A, IB1 = –4mA, IB2 = 4mA,
VCC = –50V
min
–100
2000
5000
typ
20
1.0
0.8
1.0
max
–100
–100
–100
30000
–2.5
–3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SB1252
PC—Ta IC—V
60
)
W
(
50
C
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–100
)
V
(
–30
BE(sat)
–10
–3
TC=–25˚C
–1
100˚C
– 0.3
Base to emitter saturation voltage V
– 0.1
– 0.1 –1 –10 –100– 0.3 –3 –30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(1)
(4) Without heat sink
(P
=2W)
C
(4)
(2)
(3)
V
BE(sat)—IC
IC/IB=1000
25˚C
Collector current IC (A
)
CE
–6
–5
)
A
(
–4
C
–3
–2
IB=– 0.5mA
Collector current I
–1
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
300
100
Forward current transfer ratio h
30
10
– 0.01
– 0.03
Collector current IC (A
TC=100˚C
– 0.1 –1 –10
– 0.3 –3
TC=25˚C
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
C
VCE=5V
25˚C
–25˚C
)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
Collector to emitter saturation voltage V
)
1000
)
pF
(
300
ob
100
30
10
Collector output capacitance C
V
CE(sat)—IC
IC/IB=1000
TC=100˚C
–25˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
3
1
–1 –3 –10 –30 –100
25˚C
Collector current IC (A
Cob—V
CB
IE=0
f=1MHz
T
=25˚C
C
)
Collector to base voltage VCB (V
)
100
30
)
µs
(
10
f
,t
stg
t
3
on
,t
on
t
f
1
t
stg
0.3
0.1
Switching time t
0.03
0.01
0–8–2 –6–4
Collector current IC (A
2
ton, t
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=1000
I
C/IB
)
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
Area of safe operation (ASO)
–100
–30
)
I
CP
–10
A
(
C
I
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
10ms
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
)
Page 3
Po wer Transistors 2SB1252
R
—t
th(t)
10000
)
1000
˚C/W
(
(t)
th
100
Note: Rth was measured at Ta=25˚C and under natural convection.
=10V × 0.2A (2W) and without heat sink
(1) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(2) P
T
(1)
10
1
Thermal resistance R
0.1
–4
10
–3
(2)
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
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