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UNISONIC TECHNOLOGIES CO., LTD
2SB1202
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SB1202 applies to voltage regulators, relay drivers,
lamp drivers, and electrical equipment.
FEATURES
* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching speed
PNP PLANAR TRANSISTOR
1
TO-251
1
TO-252
1
TO-126C
*Pb-free plating product number: 2SB1202L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating
2SB1202-x-T6C-K 2SB1202L-x-T6C-K TO-126C E C B Bulk
2SB1202-x-TM3-T 2SB1202L-x-TM3-T TO-251 B C E Tube
2SB1202-x-TN3-R 2SB1202L-x-TN3-R TO-252 B C E Tape Reel
2SB1202-x-TN3-T 2SB1202L-x-TN3-T TO-252 B C E Tube
2SB1202L-x-T6C-K
(1)Pack i ng Type
(2)Pack a ge Type
(3)Rank
(4)Lead Plating
Package
(1 ) K: Bul k, T: Tub e, R: Tape Re e l
(2) T6C: TO-126C, T M3: TO-251, T N3: TO-252
(3) x: refer to Classification of h
(4) L: Lead F r ee Plating, Blank: Pb/Sn
1 2 3
Packing
FE1
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R217-005.B
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2SB1202
PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Power Dissipation
Collector Current
Ta=25°C 1 W
Tc=25
°
C
DC IC -3 A
PULSE I
-60 V
CBO
-50 V
CEO
-6 V
EBO
P
C
-6 A
CP
15 W
Junction Temperature TJ 150 °C
Storage Temperature T
-55 ~ +150
STG
°
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
C-B Breakdown Voltage BV
C-E Breakdown Voltage BV
E-B Breakdown Voltage BV
Collector Cutoff Current I
Emitter Cutoff Current I
C-E Saturation Voltage V
B-E Saturation Voltage V
DC Current Gain
IC=-10µA, IE=0 -60 V
CBO
IC=-1mA, RBE=∞ -50 V
CEO
IE=-10µA, IC=0 -6 V
EBO
VCB=-40V,IE=0 -1
CBO
VEB=-4V,IC=0 -1
EBO
IC=-2A, IB=-100mA -0.35 -0.7 V
CE(SAT)
IC=-2A, IB=-100mA -0.94 -1.2 V
BE(SAT)
h
VCE=-2V, Ic=-100mA 100 560
FE1
VCE=-2V, Ic=-3A 35
h
FE2
µ
A
µ
A
Gain-Bandwidth Product fT VCE=-10V, IC=-50mA 150 MHz
Output Capacitance Cob VCB=-10V, f=1MHz 39 pF
Turn-on Time tON See test circuit 70 ns
Storage Time t
See test circuit 450 ns
STG
Fall Time tF See test circuit 35 ns
CLASSIFICATION OF h
FE1
RANK R S T U
RANGE 100-200 140-280 200-400 280-560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R217-005.B
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2SB1202
PNP PLANAR TRANSISTOR
TEST CIRCUIT FOR NPN
(PNP: the polarity is reversed; Unit: resistance: Ω, capacitance: F)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R217-005.B
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2SB1202
TYPICAL CHARACTERISTICS
PNP PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R217-005.B
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2SB1202
PNP PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specif ications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
malf unction of these products can be reasonably ex pected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R217-005.B
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